Перегляд за автором "Yodgorova, D.M."

Результати 1-6 з 6

Determination of potential distribution in a three-barrier structure

Yodgorova, D.M.; Zoirova, L.X.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)

Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across ...
Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides

Yodgorova, D.M.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing ...
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction

Karimov, A.V.; Yodgorova, D.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different ...
Research of structures with corrugated photoreceiving surface

Karimov, A.V.; Yodgorova, D.M.; Yakubov, E.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

Goffered photoreceiver surface in active regions perspective for manufacturing photosensitive structures can be form by chemical and epitaxial technology. Microreliefs are created on initial surface of semiconductor material ...
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base

Yodgorova, D.M.; Karimov, A.V.; Giyasova, F.A.; Karimova, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by ...
Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers

Yodgorova, D.M.; Karimov, A.V.; Giyasova, F.A.; Saidova, R.A.; Yakubov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally ...

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Перегляд за автором "Yodgorova, D.M."

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